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为您共找出"376"个相关器件
图片 型号 厂商 标准 分类 描述
Image: Q62702-G0041 Q62702-G0041 Siemens Semiconductor Group silicon bipolar mmic-amplifier (cascadable 50 W-gain block 9 dB typical gain at 1.0 ghz 9 dbm typical P-1db at 1.0 ghz 3 dB-bandwidth: DC to 2.4 ghz)
Image: Q62702-G0043 Q62702-G0043 Siemens Semiconductor Group silicon bipolar mmic-amplifier (cascadable 50 W-gain block 16 dB typical gain at 1.0 ghz 12 dbm typical P-1db at 1.0 ghz)
Image: Q62702-G0042 Q62702-G0042 Siemens Semiconductor Group silicon bipolar mmic-amplifier (cascadable 50 W-gain block 11 dB typical gain at 1.0 ghz 9 dbm typical P-1db at 1.0 ghz)
Image: BGA310 BGA310 Siemens Semiconductor Group silicon bipolar mmic-amplifier (cascadable 50 W-gain block 9 dB typical gain at 1.0 ghz 9 dbm typical P-1db at 1.0 ghz 3 dB-bandwidth: DC to 2.4 ghz)
Image: BGA312 BGA312 Siemens Semiconductor Group silicon bipolar mmic-amplifier (cascadable 50 W-gain block 11 dB typical gain at 1.0 ghz 9 dbm typical P-1db at 1.0 ghz)
Image: BGA318 BGA318 Siemens Semiconductor Group silicon bipolar mmic-amplifier (cascadable 50 W-gain block 16 dB typical gain at 1.0 ghz 12 dbm typical P-1db at 1.0 ghz)
Image: RFSA2033 RFSA2033 RF Micro Devices 无源元器件 衰减器 rfmd’s rfsa2033 is a fully monolithic analog voltage controlled attenuator (vca) featuring exceptional linearity over a typical temperature-compensated 25db gaincontrol range and low insertion loss of 1.0db typical. I
Image: UCC27212 UCC27212 Texas Instruments 机电产品 电机与驱动器 4-A sink, 4-A source output currents maximum boot voltage 120-V DC 7-V to 17-V vdd operating range 20-V abs maximum vdd operating range 5-V turn-off under voltage lockout (uvlo) input pins can tolerate –10 V to +20 V 7.2-ns rise and 5.5-ns fall time (1000-pF load) 20-ns typical propagation delay 4-ns typical delay matching specified from –40°C to +140°C
Image: ATA6626C ATA6626C Atmel typically 10 ??A supply current during sleep mode
Image: ATA6629 ATA6629 Atmel typically 10 ??A supply current during sleep mode
Image: ATA6631 ATA6631 Atmel typically 10 ??A supply current during sleep mode
Image: ATA6622C ATA6622C Atmel 集成电路 typically 10 ??A supply current during sleep mode
Image: ATA6622_10 ATA6622_10 Atmel typically 10 ??A supply current during sleep mode
Image: ATA6624C ATA6624C Atmel 集成电路 typically 10 ??A supply current during sleep mode
Image: PCF8802 PCF8802 NXP Semiconductors 集成电路 接口 - 模块 the pcf8802 is a cmos integrated circuit for battery operation, typically supplied by button cells or flexible polymer batteries
Image: C0603X822F5JACTU C0603X822F5JACTU Kemet 无源元器件 电容器 kemet’s high voltage with flexible termination (HV FT-cap) surface mount mlccs in x7r dielectric address the primary failure mode of mlccs– flex cracks, which are typically the result of excessive tensile and shear stresses produced during board flexure and thermal cycling.
Image: C0603X103F5JACTU C0603X103F5JACTU Kemet 无源元器件 电容器 kemet’s high voltage with flexible termination (HV FT-cap) surface mount mlccs in x7r dielectric address the primary failure mode of mlccs– flex cracks, which are typically the result of excessive tensile and shear stresses produced during board flexure and thermal cycling.
Image: C0603X822J5JACTU C0603X822J5JACTU Kemet 无源元器件 电容器 kemet’s high voltage with flexible termination (HV FT-cap) surface mount mlccs in x7r dielectric address the primary failure mode of mlccs– flex cracks, which are typically the result of excessive tensile and shear stresses produced during board flexure and thermal cycling.
Image: C0603X912J5JACTU C0603X912J5JACTU Kemet 无源元器件 电容器 kemet’s high voltage with flexible termination (HV FT-cap) surface mount mlccs in x7r dielectric address the primary failure mode of mlccs– flex cracks, which are typically the result of excessive tensile and shear stresses produced during board flexure and thermal cycling.
Image: C0603X182J5JACTU C0603X182J5JACTU Kemet 无源元器件 电容器 kemet’s high voltage with flexible termination (HV FT-cap) surface mount mlccs in x7r dielectric address the primary failure mode of mlccs– flex cracks, which are typically the result of excessive tensile and shear stresses produced during board flexure and thermal cycling.

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