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Image IPD30N03S4L-14
型号:

IPD30N03S4L-14

厂商: Infineon Technologies Infineon Technologies
标准:
分类: 半导体分离式半导体
描述: mosfet optimos T2 N-CH 30v 30a 13.6mohms
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IPD30N03S4L-14的详细信息

Manufacturer: Infineon
Product Category: MOSFET
RoHS: Yes
Brand: Infineon Technologies
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs - Gate-Source Breakdown Voltage: 16 V
Id - Continuous Drain Current: 30 A
Rds On - Drain-Source Resistance: 13.6 mOhms
Configuration: Single
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 31 W
Mounting Style: SMD/SMT
Package / Case: DPAK-2
Packaging: Reel
Channel Mode: Enhancement
Fall Time: 2 ns
Minimum Operating Temperature: - 55 C
Rise Time: 2 ns
Series: IPD30N03
Factory Pack Quantity: 2500
Typical Turn-Off Delay Time: 12 ns
Part # Aliases: IPD30N03S4L14ATMA1 SP000275919