Image STP360N4F6
型号:

STP360N4F6

厂商: STMicroelectronics STMicroelectronics
标准:
分类: 半导体分离式半导体
描述: mosfet N-CH 40v 120a stripfet VI deepgate
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STP360N4F6的详细信息

Manufacturer: STMicroelectronics
Product Category: MOSFET
RoHS: Yes
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 40 V
Vgs - Gate-Source Breakdown Voltage: 20 V
Id - Continuous Drain Current: 120 A
Rds On - Drain-Source Resistance: 1.8 mOhms
Configuration: Single
Vgs th - Gate-Source Threshold Voltage: 4.5 V
Qg - Gate Charge: 340 nC
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 300 W
Mounting Style: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Brand: STMicroelectronics
Minimum Operating Temperature: - 55 C
Series: STP360N4F6
Factory Pack Quantity: 50