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STP165N10F4的详细信息
Manufacturer: | STMicroelectronics |
---|---|
Product Category: | MOSFET |
RoHS: | Yes |
Brand: | STMicroelectronics |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 100 V |
Vgs - Gate-Source Breakdown Voltage: | 4 V |
Id - Continuous Drain Current: | 120 A |
Rds On - Drain-Source Resistance: | 5.5 mOhms |
Configuration: | Single |
Vgs th - Gate-Source Threshold Voltage: | 4 V |
Qg - Gate Charge: | 192 nC |
Pd - Power Dissipation: | 315 W |
Mounting Style: | Through Hole |
Package / Case: | TO-220-3 |
Packaging: | Tube |
Series: | STP165N10F4 |
Factory Pack Quantity: | 50 |
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