Image STGF30H60DF
型号:

STGF30H60DF

厂商: STMicroelectronics STMicroelectronics
标准:
分类: 半导体分离式半导体
描述: igbt transistors 600v 30a high speed trench gate igbt
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Datasheet下载地址

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STGF30H60DF的详细信息

Manufacturer: STMicroelectronics
Product Category: IGBT Transistors
RoHS: Yes
Configuration: Single
Collector- Emitter Voltage VCEO Max: 600 V
Collector-Emitter Saturation Voltage: 2.4 V
Maximum Gate Emitter Voltage: 20 V
Continuous Collector Current at 25 C: 60 A
Gate-Emitter Leakage Current: 250 nA
Power Dissipation: 37 W
Maximum Operating Temperature: + 175 C
Package / Case: TO-220-3 FP
Packaging: Tube
Brand: STMicroelectronics
Minimum Operating Temperature: - 40 C
Mounting Style: Through Hole
Series: STGF30H60DF
Factory Pack Quantity: 50

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