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NSS20101JT1G的详细信息
Manufacturer: | ON Semiconductor |
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Product Category: | Transistors Bipolar - BJT |
RoHS: | Yes |
Brand: | ON Semiconductor |
Configuration: | Single |
Transistor Polarity: | NPN |
Collector- Base Voltage VCBO: | 40 V |
Collector- Emitter Voltage VCEO Max: | 20 V |
Emitter- Base Voltage VEBO: | 6 V |
Maximum DC Collector Current: | 2 A |
Gain Bandwidth Product fT: | 350 MHz |
Maximum Operating Temperature: | + 150 C |
Mounting Style: | SMD/SMT |
Package / Case: | SC-89 |
DC Collector/Base Gain hfe Min: | 200 at 10 m at 2 V, 200 at 100 mA at 2 V, 150 at 500 mA at 2 V, 100 at 1 A at 2 V |
Maximum Power Dissipation: | 300 mW |
Minimum Operating Temperature: | - 55 C |
Packaging: | Reel |
Series: | NSS20101J |
Factory Pack Quantity: | 3000 |
NSS20101JT1G相关文档
- Package Drawing: SC-89, 3 LEAD
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