型号:

NSS20101JT1G

厂商: ON Semiconductor ON Semiconductor
标准:
分类: 半导体分离式半导体
描述: transistors bipolar - bjt 20v npn low vce(sat)
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NSS20101JT1G的详细信息

Manufacturer: ON Semiconductor
Product Category: Transistors Bipolar - BJT
RoHS: Yes
Brand: ON Semiconductor
Configuration: Single
Transistor Polarity: NPN
Collector- Base Voltage VCBO: 40 V
Collector- Emitter Voltage VCEO Max: 20 V
Emitter- Base Voltage VEBO: 6 V
Maximum DC Collector Current: 2 A
Gain Bandwidth Product fT: 350 MHz
Maximum Operating Temperature: + 150 C
Mounting Style: SMD/SMT
Package / Case: SC-89
DC Collector/Base Gain hfe Min: 200 at 10 m at 2 V, 200 at 100 mA at 2 V, 150 at 500 mA at 2 V, 100 at 1 A at 2 V
Maximum Power Dissipation: 300 mW
Minimum Operating Temperature: - 55 C
Packaging: Reel
Series: NSS20101J
Factory Pack Quantity: 3000

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