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2SD1223(TE16L1,NQ) |
Toshiba |
 |
半导体
分离式半导体
|
transistors bipolar - bjt npn vceO 80v vce 1.5 Ic 4A hfe 2000 min |
|
2SC2655-Y(TE6,F,M) |
Toshiba |
|
半导体
分离式半导体
|
transistors bipolar - bjt npn vce 0.5V 900mw vceO 50v tstg 1.0 |
|
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2SC3303-Y(T6L1,NQ) |
Toshiba |
|
半导体
分离式半导体
|
transistors bipolar - bjt npn vce 0.4V IC 3A tstg 1.0 vceO 80v |
|
ZXTP03200BGTA |
Diodes Incorporated |
 |
半导体
分离式半导体
|
transistors bipolar - bjt 200v pnp low vce 2A Ic vceo -200v |
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ZXTP26020DMFTA |
Diodes Incorporated |
|
半导体
分离式半导体
|
transistors bipolar - bjt 20v low vce pnp vceo -20v -1.25 Ic |
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IRG4BC40S |
International Rectifier |
|
半导体
|
insulated gate bipolar transistor standard speed igbt(vces=600v, vce(on)typ.=1.32v, @vge=15v, Ic=31a) |
|
IRG4PC40 |
International Rectifier |
|
半导体
|
insulated gate bipolar transistor(vces=600v, vce(on)typ.=1.50v, @vge=15v, Ic=27a) |
|
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IRG4PC40KD |
International Rectifier |
|
半导体
|
insulated gate bipolar transistor with ultrafast soft recovery diode(vces=600v, vce(on)typ.=2.1V, @vge=15v, Ic=25a) |
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IRG4PC40S |
International Rectifier |
|
|
insulated gate bipolar transistor(vces=600v, vce(on)typ.=1.32v, @vge=15v, Ic=31a) |
|
IRG4PC40UD |
International Rectifier |
|
半导体
|
insulated gate bipolar transistor with ultrafast soft recovery diode( vces=600v, vce(on)typ.=1.72v, @vge=15v, Ic=20a) |
|
|
IRG4PC50FD |
International Rectifier |
|
|
insulated gate bipolar transistor with ultrafast soft recovery diode(vces=600v, vce(on)typ.=1.45v, @vge=15v, Ic=39a) |
|
|
IRG4BC30US |
International Rectifier |
|
|
insulated gate bipolar transistor ultrafast speed igbt(vces=600v, vce(on)typ. = 1.95v, @vge=15v, Ic=12a) |
|
IRG4BC20KDS |
International Rectifier |
|
半导体
|
insulated gate bipolar transistor with ultrafast soft recovery diode(vces=600v, vce(on)typ.=2.27v, @vge=15v, Ic=9.0A) |
|
|
IRG4BC20KS |
International Rectifier |
|
|
insulated gate bipolar transistor(vces=600v, vce(on)typ.=2.27v, @vge=15v, Ic=9.0A) |
|
IRG4BC20MD-S |
International Rectifier |
|
半导体
|
insulated gate bipolar transistor with ultrafast soft recovery diode(vces=600v, vce(on)typ.=1.85v, @vge=15v, Ic=11a) |
|
|
IRG4BC30KDS |
International Rectifier |
|
半导体
|
insulated gate bipolar transistor with ultrafast soft recovery diode(vces=600v, vce(on)typ.=2.21v, @vge=15v, Ic=16a) |
|
|
IRG4BC30KS |
International Rectifier |
|
|
insulated gate bipolar transistor(vces=600v, vce(on)typ.=2.21v, @vge=15v, Ic=16a) |
|
|
IRG4BC30S-S_04 |
International Rectifier |
|
|
insulated gate bipolar transistor standard speed igbt(vces=600v, vce(on)typ.=1.4V, @vge=15v, Ic=18a) |
|
|
IRG4BC30KS_04 |
International Rectifier |
|
|
insulated gate bipolar transistor(vces=600v, vce(on)typ.=2.21v, @vge=15v, Ic=16a) |
|
|
IRG4BC30SS_04 |
International Rectifier |
|
|
insulated gate bipolar transistor standard speed igbt(vces=600v, vce(on)typ.=1.4V, @vge=15v, Ic=18a) |
