Image IPD14N06S2-80
型号:

IPD14N06S2-80

厂商: Infineon Technologies Infineon Technologies
标准:
分类: 半导体分离式半导体
描述: mosfet optimos pwr-trans N-CH 55v 17a
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IPD14N06S2-80的详细信息

Manufacturer: Infineon
Product Category: MOSFET
RoHS: Yes
Brand: Infineon Technologies
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 55 V
Vgs - Gate-Source Breakdown Voltage: 20 V
Id - Continuous Drain Current: 17 A
Rds On - Drain-Source Resistance: 80 mOhms
Configuration: Single
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 47 W
Mounting Style: SMD/SMT
Package / Case: DPAK-2
Packaging: Reel
Channel Mode: Enhancement
Fall Time: 20 ns
Minimum Operating Temperature: - 55 C
Rise Time: 17 ns
Series: IPD14N06
Factory Pack Quantity: 2500
Typical Turn-Off Delay Time: 15 ns
Part # Aliases: IPD14N06S280ATMA1 SP000252161