Image IPB107N20NAXT
型号:

IPB107N20NAXT

厂商: Infineon Technologies Infineon Technologies
标准:
分类: 半导体分离式半导体
描述: mosfet optimos 3 power transistor
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IPB107N20NAXT的详细信息

Manufacturer: Infineon
Product Category: MOSFET
RoHS: Yes
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 200 V
Vgs - Gate-Source Breakdown Voltage: 20 V
Id - Continuous Drain Current: 88 A
Rds On - Drain-Source Resistance: 9.6 mOhms
Configuration: Single
Vgs th - Gate-Source Threshold Voltage: 3 V
Qg - Gate Charge: 65 nC
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 300 W
Mounting Style: SMD/SMT
Package / Case: D2PAK-2
Packaging: Reel
Brand: Infineon Technologies
Ciss - Input Capacitance: 5.34 nF
Fall Time: 11 ns
Minimum Operating Temperature: - 55 C
Rise Time: 26 ns
Series: IPB107N20
Factory Pack Quantity: 1000
Tradename: OptiMOS
Typical Turn-Off Delay Time: 41 ns
Part # Aliases: IPB107N20NAATMA1 SP000877674

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