Image FDG6308P
型号:

FDG6308P

厂商: Fairchild Semiconductor Fairchild Semiconductor
标准:
分类: 半导体分离式半导体
描述: mosfet dual P-Ch 1.8V spec power trench
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FDG6308P的详细信息

Manufacturer: Fairchild Semiconductor
Product Category: MOSFET
RoHS: Yes
Transistor Polarity: P-Channel
Vds - Drain-Source Breakdown Voltage: - 20 V
Vgs - Gate-Source Breakdown Voltage: 8 V
Id - Continuous Drain Current: 600 mA
Rds On - Drain-Source Resistance: 400 mOhms
Configuration: Dual
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 300 mW
Mounting Style: SMD/SMT
Package / Case: SC-70-6
Packaging: Reel
Brand: Fairchild Semiconductor
Channel Mode: Enhancement
Fall Time: 15 ns
Forward Transconductance - Min: 2.1 S
Minimum Operating Temperature: - 55 C
Rise Time: 15 ns
Series: FDG6308P
Factory Pack Quantity: 3000
Typical Turn-Off Delay Time: 7 ns
Part # Aliases: FDG6308P_NL
Unit Weight: 28 mg