Image FDC3601N
型号:

FDC3601N

厂商: Fairchild Semiconductor Fairchild Semiconductor
标准:
分类: 半导体分离式半导体
描述: mosfet dual N-Ch 100v spec power trench
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FDC3601N的详细信息

Manufacturer: Fairchild Semiconductor
Product Category: MOSFET
RoHS: Yes
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 100 V
Vgs - Gate-Source Breakdown Voltage: 20 V
Id - Continuous Drain Current: 1 A
Rds On - Drain-Source Resistance: 500 mOhms
Configuration: Dual
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 960 mW
Mounting Style: SMD/SMT
Package / Case: SSOT-6
Packaging: Reel
Brand: Fairchild Semiconductor
Channel Mode: Enhancement
Fall Time: 4 ns
Forward Transconductance - Min: 3.6 S
Minimum Operating Temperature: - 55 C
Rise Time: 4 ns
Series: FDC3601N
Factory Pack Quantity: 3000
Typical Turn-Off Delay Time: 11 ns
Part # Aliases: FDC3601N_NL
Unit Weight: 36 mg