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CSD88537NDT的详细信息
Manufacturer: | Texas Instruments |
---|---|
Product Category: | MOSFET |
RoHS: | Yes |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 60 V |
Vgs - Gate-Source Breakdown Voltage: | 20 V |
Id - Continuous Drain Current: | 15 A |
Rds On - Drain-Source Resistance: | 15 mOhms |
Configuration: | Dual |
Vgs th - Gate-Source Threshold Voltage: | 3 V |
Qg - Gate Charge: | 14 nC |
Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 2.1 W |
Mounting Style: | SMD/SMT |
Package / Case: | SOIC-8 |
Packaging: | Reel |
Brand: | Texas Instruments |
Channel Mode: | Enhancement |
Fall Time: | 19 ns |
Forward Transconductance - Min: | 42 S |
Minimum Operating Temperature: | - 55 C |
Rise Time: | 15 ns |
Series: | CSD88537 |
Typical Turn-Off Delay Time: | 5 ns |
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