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IRG4PH50U |
International Rectifier |
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insulated gate bipolar transistor(vces=1200v, vce(on)typ.=2.78v, @vge=15v, Ic=24a) |
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IRG4PH50UD |
International Rectifier |
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insulated gate bipolar transistor with ultrafast soft recovery diode(vces=1200v, vce(on)typ.=2.78v, @vge=15v, Ic=24a) |
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IRG4PSC71UD |
International Rectifier |
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半导体
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insulated gate bipolar transistor with ultrafast soft recovery diode(vces=600v, vce(on)typ.=1.67v, @vge=15v, Ic=60a) |
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IRG4PSH71K |
International Rectifier |
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半导体
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insulated gate bipolar transistor(vces=1200v, vce(on)typ.=2.97v, @vge=15v, Ic=42a) |
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IRG4RC10S |
International Rectifier |
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半导体
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insulated gate bipolar transistor(vces=600v, vce(on)typ.=1.10v, @vge=15v, IC=2.0A) |
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IRG4RC10U |
International Rectifier |
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半导体
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insulated gate bipolar transistor(vces=600v, vce(on)typ.=2.15v, @vge=15v, Ic=5.0A) |
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IRG4PSC71U |
International Rectifier |
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半导体
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insulated gate bipolar transistor(vces=600v, vce(on)typ.=1.67v, @vge=15v, Ic=60a) |
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ZXTP03200BZTA |
Diodes Incorporated |
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半导体
分离式半导体
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transistors bipolar - bjt 200v pnp low vce 2A Ic 160mv vce 2.4W |
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OSC-1.3SH |
Advanced Semiconductor |
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npn silicon RF power transistor(Ic: 700 mA,vce: 30 V)(npn 硅型射频功率晶体管(Ic: 700 mA,vce: 30 V)) |
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OSC-2.0SM |
Advanced Semiconductor |
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npn silicon RF power transistor(Ic: 700 mA,vce: 30 V)(npn 硅型射频功率晶体管(Ic: 700 mA,vce: 30 V)) |
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STT13005D-K |
STMicroelectronics |
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半导体
分离式半导体
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transistors bipolar - bjt high voltage npn 700v vces 400v vceo |
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2STL2580 |
STMicroelectronics |
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半导体
分离式半导体
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transistors bipolar - bjt high volt npn trans 800v vces 400v vceo |
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TRD236DT4 |
STMicroelectronics |
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半导体
分离式半导体
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transistors bipolar - bjt high voltage npn 700v vces 400v vceo |
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TRD136DT4 |
STMicroelectronics |
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半导体
分离式半导体
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transistors bipolar - bjt high voltage npn 700v vces 400v vceo |
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HN4B01JE(TE85L,F) |
Toshiba |
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半导体
分离式半导体
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transistors bipolar - bjt vceo=-50v vceo=50v |
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HN7G08FE-A(TE85L,F |
Toshiba |
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半导体
分离式半导体
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双极小信号 vceo=-12v vceo=50v Ic=-400ma IC=100ma |
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HN7G06FU-A(TE85L,F |
Toshiba |
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半导体
分离式半导体
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双极小信号 vceo=-12v vceo=50v 47k x 47kohms |
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HN7G04FU-A(TE85L,F |
Toshiba |
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半导体
分离式半导体
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双极小信号 vceo=-12v vceo=50v 10k x 47kohms |
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UMH3N |
Rohm Semiconductor |
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半导体
晶体管
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特性： 年级标准包装代码sot-363jeita套餐SC-88包装尺寸[mm]2.0x2.1（t = 0.9）端子数6极性npn + npn电源电压vcc 1 [V]50.0集电极电流Io（Ic）[A]0.1输入电阻R1 1 [kΩ]4.7输入电阻R1 2 [kΩ]4.7集电极-发射极电压vceo1 [V]50.0集电极电流Io（Ic）[A]0.1集电极-发射极电压vceo2 [V]50.0集电极电流（连续）ic2 [A]0.1功耗（PD）[W]0.15安装方式表面贴装 |
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UMH33N |
Rohm Semiconductor |
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半导体
晶体管
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特性： 年级标准包装代码sot-363jeita套餐SC-88包装尺寸[mm]2.0x2.1（t = 0.9）端子数6极性npn + npn电源电压vcc 1 [V]20.0集电极电流Io（Ic）[A]0.4输入电阻R1 1 [kΩ]2.2输入电阻R1 2 [kΩ]2.2集电极-发射极电压vceo1 [V]20.0集电极电流Io（Ic）[A]0.4集电极-发射极电压vceo2 [V]20.0集电极电流（连续）ic2 [A]0.4功耗（PD）[W]0.15安装方式表面贴装胃肠炎820至2700输出电流[A]0.4 |
