|
BLA1011-200R,112 |
NXP Semiconductors |
|
半导体
分离式半导体
|
transistors RF mosfet trans ldmos nch 75v |
|
BLF888A,112 |
NXP Semiconductors |
|
半导体
分离式半导体
|
transistors RF mosfet uhf power ldmos transistor |
|
BLA6H1011-600,112 |
NXP Semiconductors |
|
半导体
分离式半导体
|
transistors RF mosfet trans avionics pwr ldmos |
|
BLL6H1214-500,112 |
NXP Semiconductors |
|
半导体
分离式半导体
|
transistors RF mosfet trans L-band radar ldmos |
|
BLL6H1214LS-500,11 |
NXP Semiconductors |
|
半导体
分离式半导体
|
transistors RF mosfet pwr ldmos transistor |
|
BLS7G2729L-350P,11 |
NXP Semiconductors |
|
半导体
分离式半导体
|
transistors RF mosfet ldmos S-band radar power transistor |
|
BLU6H0410L-600P,11 |
NXP Semiconductors |
|
半导体
分离式半导体
|
transistors RF mosfet pwr ldmos transistor |
|
BLA6H0912-500,112 |
NXP Semiconductors |
|
半导体
分离式半导体
|
transistors RF mosfet trans radar pwr ldmos |
|
BLS6G2731-120,112 |
NXP Semiconductors |
|
半导体
分离式半导体
|
transistors RF mosfet ldmos tns |
|
BLF6G27-45,135 |
NXP Semiconductors |
|
半导体
分离式半导体
|
transistors RF mosfet trans wimax pwr ldmos |
|
NE55410GR-AZ |
CEL |
|
半导体
分离式半导体
|
transistors RF MOSfet N-Ch power ldmos fet |
|
MD7IC18120NR1 |
Freescale Semiconductor |
|
半导体
射频半导体
|
RF amplifier RF ldmos WB amp hv7ic 120wgsm |
|
MAX1385BUTM+T |
Maxim Integrated |
|
半导体
射频半导体
|
RF amplifier 2ch RF ldmos bias controller |
|
MAX1385BETM+T |
Maxim Integrated |
|
半导体
射频半导体
|
RF amplifier 2ch RF ldmos bias controller |
|
MAX11008BETM+T |
Maxim Integrated |
|
半导体
射频半导体
|
RF amplifier dual RF ldmos bias controller w/NV mem |
|
MAX1385BETM+ |
Maxim Integrated |
|
半导体
射频半导体
|
RF amplifier 2ch RF ldmos bias controller |
|
MAX11008BETM+ |
Maxim Integrated |
|
半导体
射频半导体
|
RF amplifier dual RF ldmos bias controller w/NV mem |
|
MD7IC18120GNR1 |
Freescale Semiconductor |
|
半导体
射频半导体
|
RF amplifier RF ldmos WB amp hv7ic 120wgsm |
|
MAX1385BUTM+ |
Maxim Integrated |
|
半导体
射频半导体
|
RF amplifier 2ch RF ldmos bias controller |
|
DS1870E-010+ |
Maxim Integrated |
|
半导体
集成电路 - IC
|
special purpose amplifiers ldmos RF power-amp bias controller |