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NXP Semiconductors 
Datasheet下载地址
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BLA6H0912-500,112的详细信息
| Manufacturer： | NXP |
|---|---|
| Product Category： | Transistors RF MOSFET |
| RoHS： | Yes |
| Configuration： | Single |
| Transistor Polarity： | N-Channel |
| Frequency： | 0.96 GHz to 1.215 GHz |
| Gain： | 17 dB |
| Output Power： | 450 W |
| Vds - Drain-Source Breakdown Voltage： | 100 V |
| Id - Continuous Drain Current： | 54 A |
| Vgs - Gate-Source Breakdown Voltage： | 13 V |
| Maximum Operating Temperature： | + 150 C |
| Mounting Style： | SMD/SMT |
| Package / Case： | SOT-634A |
| Packaging： | Tube |
| Brand： | NXP Semiconductors |
| Factory Pack Quantity： | 20 |
| Vgs th - Gate-Source Threshold Voltage： | 1.8 V |
BLA6H0912-500,112相关文档
- Brochure: Your partner in Mobile Communication Infrastructure design; High Performance RF for wireless infrastructure (v.1.0)
- Simulation model: RF Power Model Library for MicroWave Office (v.2.2)
- Report: CA-330-11 LDMOS bias module (v.1.0)
- Mounting and soldering: Fatigue in aluminum bond wires (v.1.0)
- Simulation model: RF Power Model Library Manual and Installation Instructions for MicroWave Office (v.3.2)
- Brochure: High performance aerospace and defense solutions (v.1.2)
- Selection guide: NXP's RF Manual 16th edition (v.1.0)
- Application note: Mounting and Soldering of RF transistors (v.1.0)
- Other type: High Power RF LDMOS Transistors for Avionics Applications (v.1.0)
- Simulation model: RF Power Simulation Example for MicroWave Office (v.1.0)
- Other type: PCB Design BLA6H0912-500 (Data sheet) (v.1.1)
- Simulation model: BLA6H0912-500 ADS Model (v.1.0)
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