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Image: SM5420E-060-A-P-S SM5420E-060-A-P-S Silicon Microstructures, Inc. 传感器,变送器 压力传感器 the sm5420e is a small outline so8 packaged pressure sensor that incorporates smi’s new sm5108e mems piezoresistive pressure sensing die.
Image: SM5420E-060-A-H-S SM5420E-060-A-H-S Silicon Microstructures, Inc. 传感器,变送器 压力传感器 the sm5420e is a small outline so8 packaged pressure sensor that incorporates smi’s new sm5108e mems piezoresistive pressure sensing die
Image: SM5420E-100-A-H-S SM5420E-100-A-H-S Silicon Microstructures, Inc. 传感器,变送器 压力传感器 the sm5420e is a small outline so8 packaged pressure sensor that incorporates smi’s new sm5108e mems piezoresistive pressure sensing die
Image: SM5420E-030-A-P-S SM5420E-030-A-P-S Silicon Microstructures, Inc. 传感器,变送器 压力传感器 the sm5420e is a small outline so8 packaged pressure sensor that incorporates smi’s new sm5108e mems piezoresistive pressure sensing die.
Image: SM5420E-030-A-H-T SM5420E-030-A-H-T Silicon Microstructures, Inc. 传感器,变送器 压力传感器 the sm5420e is a small outline so8 packaged pressure sensor that incorporates smi’s new sm5108e mems piezoresistive pressure sensing die.
Image: TPS92691PWP TPS92691PWP Texas Instruments 光电子 驱动器 the device implements a fixed-frequencylow input offset rail-to-rail current sense peak current mode control technique with amplifier programmable switching frequency, slope compensation, and soft-start timing. It incorporates a – better than ±3% led current accuracy over high voltage (65-V) rail-to-rail current sense amplifier 25°C to 140°C junction temperature range that can directly measure led current using either a – compatible with high-side and low-side high-side or a low-side series sense resistor.