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RM10R-0R02-J |
RFE international |
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surface mount RM series: less than 1 ohm & greater than 10 meg ohms resistors |
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HN29V102414 |
Renata |
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1G and type flash memory more than 32,113-sector (542,581,248-bit) x 2 |
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HN29V102414T-50 |
Renata |
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1G and type flash memory more than 32,113-sector (542,581,248-bit) x 2 |
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1N5616US |
Microsemi Corporation |
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standard rectifier (trr more than 500ns)
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1N5623US |
Microsemi Corporation |
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standard rectifier (trr more than 500ns)
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1N5614US |
Microsemi Corporation |
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standard rectifier (trr more than 500ns)
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1N5622US |
Microsemi Corporation |
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standard rectifier (trr more than 500ns)
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1N5618US |
Microsemi Corporation |
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standard rectifier (trr more than 500ns)
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1N5620US |
Microsemi Corporation |
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standard rectifier (trr more than 500ns)
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EP7312-90 |
Cirrus Logic Inc |
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new arm720t 90 mhz embedded processor allows faster than real-time recording |
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1N3595UR-1 |
Microsemi Corporation |
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standard rectifier (trr more than 500ns)
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HN29V25611A |
Renata |
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256m and type flash memory more than 16,057-sector (271,299,072-bit) |
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HN29V25611AT-50 |
Renata |
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256m and type flash memory more than 16,057-sector (271,299,072-bit) |
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HN29V25611AT-50H |
Renata |
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256m and type flash memory more than 16,057-sector (271,299,072-bit) |
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FMKA130 |
Fairchild Semiconductor |
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1.2 watt power dissipation package 1.0 ampere, forward voltage less than 600mv |
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HN29W12811T-60 |
Hitachi Semiconductor |
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128m and type flash memory more than 8,029-sector (135,657,984-bit) |
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HN29W12811 |
Hitachi Semiconductor |
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128m and type flash memory more than 8,029-sector (135,657,984-bit) |
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HN29V51211 |
Hitachi Semiconductor |
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512m and type flash memory more than 32,113-sector (542,581,248-bit) |
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HN29V51211T-50 |
Hitachi Semiconductor |
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512m and type flash memory more than 32,113-sector (542,581,248-bit) |
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M5M29F25611VP |
Mitsubishi Electric |
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more than 16,057 sectors (271,299,072 bits) cmos 3.3V-only serial read flash memory |