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Image: A2T18S162W31S A2T18S162W31S NXP Semiconductors 半导体 RF 晶体管 (BJT) these 32 W RF power ldmos transistors are designed for cellular basestation applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1880 mhz.
Image: A2T08VD020N A2T08VD020N NXP Semiconductors 半导体 RF 晶体管 (BJT) this 2 W RF power ldmos transistor is designed for cellular base stationapplications covering the frequency range of 728 to 960 mhz.
Image: AFT21H350W03S AFT21H350W03S NXP Semiconductors 半导体 RF 晶体管 (BJT) these 63 watt asymmetrical doherty RF power ldmos transistors are designed for cellular base station applications requiring very wideinstantaneous bandwidth capability covering the frequency range of 2110 to2170 mhz

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