关键词wideinstantaneous
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Image: AFT21H350W03S AFT21H350W03S NXP Semiconductors 半导体 RF 晶体管 (BJT) these 63 watt asymmetrical doherty RF power ldmos transistors are designed for cellular base station applications requiring very wideinstantaneous bandwidth capability covering the frequency range of 2110 to2170 mhz

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