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MRM2-728 |
Bivar Inc |
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机电产品
硬件
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led mounting hardware led mount vert .728 in black |
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104450-6 |
TE Connectivity / AMP |
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连接器
集管和线壳
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headers & wire housings 7P RA ltch header 728 |
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X3DC07E2S |
Anaren |
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无源元器件
信号调节
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signal conditioning 728-768mhz IL:.15db -55c to +95c |
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BMI-S-209-F |
Laird Technologies |
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无源元器件
EMI/RFI 器件
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emi connector gaskets & grounding pads bmis-209 frame .276"x1.156"x.728" |
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80803014 |
Crouzet USA |
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机电产品
电机 - AC,DC
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24vdc 728-45:1 SP 1749.20 |
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MGA-43013-TR1G |
Avago Technologies |
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无源元器件
RF 放大器
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IC PA module 728-756mhz mcob |
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MGA-43013-BLKG |
Avago Technologies |
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无源元器件
RF 放大器
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IC PA module 728-756mhz mcob |
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M5M29KE131BTP |
Renata |
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134,217,728-bit (16,777,216-word BY 8-bit / 8,388,608-word BY 16-bit) cmos flash memory |
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MH28S72PJG-5 |
Mitsubishi Electric |
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9,663,676,416-bit ( 134,217,728-word BY 72-bit ) synchronous dynamic ram |
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MH28S72PJG-6 |
Mitsubishi Electric |
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9,663,676,416-bit ( 134,217,728-word BY 72-bit ) synchronous dynamic ram |
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MH28S72PJG-7 |
Mitsubishi Electric |
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9,663,676,416-bit ( 134,217,728-word BY 72-bit ) synchronous dynamic ram |
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MH28D72KLG-10 |
Mitsubishi Electric |
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9,663,676,416-bit (134,217,728-word BY 72-bit) double data rate synchronous dram module |
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MH28D72KLG-75 |
Mitsubishi Electric |
|
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9,663,676,416-bit (134,217,728-word BY 72-bit) double data rate synchronous dram module |
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M5M29KE131BVP |
Renata |
|
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134,217,728-bit (16,777,216-word BY 8-bit / 8,388,608-word BY 16-bit) cmos flash memory stacked-umcp (micro multi chip package) |
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TDA8732 |
Philips Semiconductors |
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nicam-728 demodulator nidem |
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M6MGD13TW34DWG |
Renata |
|
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134,217,728-bit (8,388,608-word BY 16-bit) cmos flash memory & 33,554,432-bit (2,097,152-word BY 16-bit) cmos mobile ram |
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M6MGD137W34DWG |
Renata |
|
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134,217,728-bit (8,388,608-word BY 16-bit) cmos flash memory & 33,554,432-bit (2,097,152-word BY 16-bit) cmos mobile ram |
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M6MGD13TW66CWG-P |
Renata |
|
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134,217,728-bit (8,388,608-word BY 16-bit) cmos flash memory & 67,108,864-bit (4,194,304-word BY 16-bit) cmos mobile ram |
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MMRF2005N |
NXP Semiconductors |
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半导体
RF 晶体管 (BJT)
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the mmrf2005n wideband integrated circuit is designed with on--chip matching that makes it usable from 728 to 960 mhz |
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A2T08VD020N |
NXP Semiconductors |
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半导体
RF 晶体管 (BJT)
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this 2 W RF power ldmos transistor is designed for cellular base stationapplications covering the frequency range of 728 to 960 mhz. |