|
M3P75A-160 |
GeneSiC Semiconductor |
![Rohs认证](/images/rohs.png) ![无铅标识](/images/pb.png) |
半导体
分离式半导体
|
rectifiers 1600v 75a std. recovery |
|
BLF6H10L-160,112 |
NXP Semiconductors |
![Rohs认证](/images/rohs.png) ![无铅标识](/images/pb.png) |
半导体
分离式半导体
|
transistors RF mosfet 700-1ghz 104v 20db |
|
SMP100LC-160 |
STMicroelectronics |
![Rohs认证](/images/rohs.png) ![无铅标识](/images/pb.png) |
半导体
分离式半导体
|
tvs diodes - transient voltage suppressors 160v 50ua bidirect |
|
SMP100MC-160 |
STMicroelectronics |
![Rohs认证](/images/rohs.png) ![无铅标识](/images/pb.png) |
半导体
分离式半导体
|
tvs diodes - transient voltage suppressors 160v 50ua bidirect |
|
BLF7G22L-160,112 |
NXP Semiconductors |
![Rohs认证](/images/rohs.png) ![无铅标识](/images/pb.png) |
半导体
分离式半导体
|
transistors RF mosfet power ldmos transistor |
|
BLF8G10L-160,112 |
NXP Semiconductors |
![Rohs认证](/images/rohs.png) ![无铅标识](/images/pb.png) |
半导体
分离式半导体
|
transistors RF mosfet pwr ldmos transistor |
|
BLF8G10LS-160,112 |
NXP Semiconductors |
![Rohs认证](/images/rohs.png) ![无铅标识](/images/pb.png) |
半导体
分离式半导体
|
transistors RF mosfet pwr ldmos transistor |
|
BLF7G22LS-160,112 |
NXP Semiconductors |
![Rohs认证](/images/rohs.png) ![无铅标识](/images/pb.png) |
半导体
分离式半导体
|
transistors RF mosfet power ldmos transistor |
|
BLF6H10LS-160,112 |
NXP Semiconductors |
![Rohs认证](/images/rohs.png) ![无铅标识](/images/pb.png) |
半导体
分离式半导体
|
transistors RF mosfet 700-1ghz 104v 20db |
|
BLF7G21LS-160,112 |
NXP Semiconductors |
![Rohs认证](/images/rohs.png) ![无铅标识](/images/pb.png) |
半导体
分离式半导体
|
transistors RF mosfet pwr ldmos transistor transistor |
|
BLF8G10LS-160,118 |
NXP Semiconductors |
![Rohs认证](/images/rohs.png) ![无铅标识](/images/pb.png) |
半导体
分离式半导体
|
transistors RF mosfet pwr ldmos transistor |
|
BLF8G10L-160,118 |
NXP Semiconductors |
![Rohs认证](/images/rohs.png) ![无铅标识](/images/pb.png) |
半导体
分离式半导体
|
transistors RF mosfet pwr ldmos transistor |
|
BLF7G22LS-160,118 |
NXP Semiconductors |
![Rohs认证](/images/rohs.png) ![无铅标识](/images/pb.png) |
半导体
分离式半导体
|
transistors RF mosfet power ldmos transistor |
|
BLF7G22L-160,118 |
NXP Semiconductors |
![Rohs认证](/images/rohs.png) ![无铅标识](/images/pb.png) |
半导体
分离式半导体
|
transistors RF mosfet power ldmos transistor |
|
BLF7G21LS-160,118 |
NXP Semiconductors |
![Rohs认证](/images/rohs.png) ![无铅标识](/images/pb.png) |
半导体
分离式半导体
|
transistors RF mosfet pwr ldmos transistor transistor |
|
BLF6H10LS-160,118 |
NXP Semiconductors |
![Rohs认证](/images/rohs.png) ![无铅标识](/images/pb.png) |
半导体
分离式半导体
|
transistors RF mosfet 700-1ghz 104v 20db |
|
MD-160-PIN |
MACOM |
|
半导体
射频半导体
|
RF mixer 1-1500mhz conv. loss 9db |
|
AM-160-PIN |
MACOM |
|
半导体
射频半导体
|
RF amplifier 100-600mhz NF:3.0db gain: 28.2db |
|
2095-160-BLF |
Bourns Inc. |
![Rohs认证](/images/rohs.png) ![无铅标识](/images/pb.png) |
电路保护
气体放电管 - GDT /气体等离子体避雷器
|
gas discharge tubes - gdts / gas plasma arrestors 08x8mm, 1600v HV axial gdt |
|
2097-160-DLF |
Bourns Inc. |
![Rohs认证](/images/rohs.png) ![无铅标识](/images/pb.png) |
电路保护
气体放电管 - GDT /气体等离子体避雷器
|
gas discharge tubes - gdts / gas plasma arrestors 1600v leaded gdt 11.8x17.5mm dia |