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BLF6H10LS-160,112的详细信息
Manufacturer: | NXP |
---|---|
Product Category: | Transistors RF MOSFET |
RoHS: | Yes |
Frequency: | 700 MHz to 1000 MHz |
Gain: | 20 dB |
Output Power: | 160 W |
Vds - Drain-Source Breakdown Voltage: | 104 V |
Vgs - Gate-Source Breakdown Voltage: | 13 V |
Mounting Style: | SMD/SMT |
Package / Case: | SOT-467B |
Packaging: | Tube |
Brand: | NXP Semiconductors |
Factory Pack Quantity: | 20 |
BLF6H10LS-160,112相关文档
- Simulation model: RF Power Model Library Manual and Installation Instructions for MicroWave Office (v.3.2)
- Brochure: Your partner in Mobile Communication Infrastructure design; High Performance RF for wireless infrastructure (v.1.0)
- Selection guide: NXP's RF Manual 16th edition (v.1.0)
- Application note: Mounting and Soldering of RF transistors (v.1.0)
- Mounting and soldering: Fatigue in aluminum bond wires (v.1.0)
- Simulation model: RF Power Model Library for MicroWave Office (v.2.2)
- Simulation model: RF Power Simulation Example for MicroWave Office (v.1.0)
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