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2N7000G的详细信息
Manufacturer: | ON Semiconductor |
---|---|
Product Category: | MOSFET |
RoHS: | Yes |
Brand: | ON Semiconductor |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 60 V |
Vgs - Gate-Source Breakdown Voltage: | 20 V |
Id - Continuous Drain Current: | 200 mA |
Rds On - Drain-Source Resistance: | 5 Ohms |
Configuration: | Single |
Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 350 mW |
Mounting Style: | Through Hole |
Package / Case: | TO-92-3 |
Packaging: | Bulk |
Channel Mode: | Enhancement |
Forward Transconductance - Min: | 0.0001 S |
Minimum Operating Temperature: | - 55 C |
Series: | 2N7000 |
Factory Pack Quantity: | 1000 |
Typical Turn-Off Delay Time: | 10 ns |
2N7000G相关文档
- Simulation Model: Saber Model
- Simulation Model: Spice 2 Model
- Package Drawing: TO-92 (TO-226) 5.33mm Body Height
- Simulation Model: Spice 3 Model
- Simulation Model: P Spice Model
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