信息提示：
赞 - BLF6G20180PN112！
 |
NXP Semiconductors 
Datasheet下载地址
| 本地下载 >> 厂商下载2 >> 第三方平台下载 >> |
BLF6G20-180PN,112的详细信息
| Manufacturer： | NXP |
|---|---|
| Product Category： | Transistors RF MOSFET |
| RoHS： | Yes |
| Configuration： | Dual |
| Transistor Polarity： | N-Channel |
| Frequency： | 1.8 GHz to 2 GHz |
| Gain： | 18 dB |
| Output Power： | 50 W |
| Vds - Drain-Source Breakdown Voltage： | 65 V |
| Id - Continuous Drain Current： | 25 A |
| Vgs - Gate-Source Breakdown Voltage： | 13 V |
| Maximum Operating Temperature： | + 150 C |
| Mounting Style： | SMD/SMT |
| Package / Case： | SOT-539A |
| Packaging： | Tube |
| Brand： | NXP Semiconductors |
| Factory Pack Quantity： | 20 |
| Vgs th - Gate-Source Threshold Voltage： | 1.9 V |
BLF6G20-180PN,112相关文档
- Mounting and soldering: Fatigue in aluminum bond wires (v.1.0)
- Application note: Mounting and Soldering of RF transistors (v.1.0)
- Brochure: Your partner in Mobile Communication Infrastructure design; High Performance RF for wireless infrastructure (v.1.0)
- Selection guide: NXP's RF Manual 16th edition (v.1.0)
扫码手机查看更方便
同类器件
