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赞 - BLF6G2110G112!

Image BLF6G21-10G,112
型号:

BLF6G21-10G,112

厂商: NXP Semiconductors NXP Semiconductors
标准:
分类: 半导体分离式半导体
描述: transistors RF mosfet transistor pwr ldmos
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BLF6G21-10G,112的详细信息

Manufacturer: NXP
Product Category: Transistors RF MOSFET
RoHS: Yes
Configuration: Single
Transistor Polarity: N-Channel
Frequency: 2.2 GHz
Gain: 18.5 dB
Output Power: 0.7 W
Vds - Drain-Source Breakdown Voltage: 65 V
Id - Continuous Drain Current: 3.1 A
Vgs - Gate-Source Breakdown Voltage: 13 V
Maximum Operating Temperature: + 150 C
Mounting Style: SMD/SMT
Package / Case: SOT-538A
Packaging: Tube
Brand: NXP Semiconductors
Factory Pack Quantity: 20
Vgs th - Gate-Source Threshold Voltage: 1.9 V