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Datasheet下载地址
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IXTH80N20L的详细信息
Manufacturer: | IXYS |
---|---|
Product Category: | MOSFET |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 200 V |
Vgs - Gate-Source Breakdown Voltage: | 20 V |
Id - Continuous Drain Current: | 80 A |
Rds On - Drain-Source Resistance: | 32 mOhms |
Qg - Gate Charge: | 180 nC |
Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 520 W |
Mounting Style: | Through Hole |
Package / Case: | TO-247-3 |
Packaging: | Tube |
Brand: | IXYS |
Channel Mode: | Enhancement |
Fall Time: | 29 ns |
Forward Transconductance - Min: | 30 S |
Minimum Operating Temperature: | - 55 C |
Rise Time: | 44 ns |
Series: | IXTH80N20 |
Factory Pack Quantity: | 30 |
Typical Turn-Off Delay Time: | 72 ns |
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