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DMG1016V-7的详细信息
Manufacturer: | Diodes Incorporated |
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Product Category: | MOSFET |
RoHS: | Yes |
Brand: | Diodes Incorporated |
Transistor Polarity: | N and P-Channel |
Vds - Drain-Source Breakdown Voltage: | 20 V, 20 V |
Vgs - Gate-Source Breakdown Voltage: | 6 V |
Id - Continuous Drain Current: | 870 mA, 640 mA |
Rds On - Drain-Source Resistance: | 0.7 Ohms, 1.3 Ohms |
Configuration: | Dual |
Qg - Gate Charge: | 736.6 pC, 622.4 pC |
Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 530 mW |
Mounting Style: | SMD/SMT |
Package / Case: | SOT-563-6 |
Packaging: | Reel |
Fall Time: | 12.3 ns, 20.7 ns |
Forward Transconductance - Min: | 1.4 S, - 0.9 S |
Minimum Operating Temperature: | - 55 C |
Rise Time: | 7.4 nS, 8.1 nS |
Series: | DMG1016 |
Typical Turn-Off Delay Time: | 26.7 nS, 28.4 nS |
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