Image ZXMN3B01FTA
型号:

ZXMN3B01FTA

厂商: Diodes Incorporated Diodes Incorporated
标准:
分类: 半导体分离式半导体
描述: mosfet 30v N chnl umos
报错 收藏

ZXMN3B01FTA的详细信息

Manufacturer: Diodes Incorporated
Product Category: MOSFET
RoHS: Yes
Brand: Diodes Incorporated
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs - Gate-Source Breakdown Voltage: 12 V
Id - Continuous Drain Current: 2 A
Rds On - Drain-Source Resistance: 150 mOhms
Configuration: Single
Vgs th - Gate-Source Threshold Voltage: 0.7 V
Qg - Gate Charge: 2.93 nC
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 625 mW
Mounting Style: SMD/SMT
Package / Case: SOT-23-3
Packaging: Reel
Channel Mode: Enhancement
Fall Time: 3.98 ns
Forward Transconductance - Min: 4 S
Minimum Operating Temperature: - 55 C
Rise Time: 3.98 ns
Factory Pack Quantity: 3000
Typical Turn-Off Delay Time: 8 ns