VNN1NV04PTR-E的详细信息
Manufacturer: | STMicroelectronics |
---|---|
Product Category: | MOSFET |
RoHS: | Yes |
Brand: | STMicroelectronics |
Transistor Polarity: | P-Channel |
Vds - Drain-Source Breakdown Voltage: | - 40 V |
Id - Continuous Drain Current: | 30 uA |
Rds On - Drain-Source Resistance: | 250 mOhms |
Configuration: | Single |
Qg - Gate Charge: | 5 nC |
Pd - Power Dissipation: | 7 W |
Mounting Style: | SMD/SMT |
Package / Case: | SOT-223-3 |
Packaging: | Reel |
Fall Time: | 200 ns |
Forward Transconductance - Min: | 2 S |
Rise Time: | 170 ns |
Series: | VNN1NV04P-E |
Factory Pack Quantity: | 1000 |
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