Image TK16N60W,S1VF
型号:

TK16N60W,S1VF

厂商: Toshiba
标准:
分类: 半导体分离式半导体
描述: mosfet dtmosiv 600v 190mohm 15.8A 130w 1350pf
报错 收藏

Datasheet下载地址

本地下载 >> 厂商下载 >>

TK16N60W,S1VF的详细信息

Manufacturer: Toshiba
Product Category: MOSFET
RoHS: Yes
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 600 V
Vgs - Gate-Source Breakdown Voltage: 30 V
Id - Continuous Drain Current: 15.8 A
Rds On - Drain-Source Resistance: 160 mOhms
Configuration: Single
Vgs th - Gate-Source Threshold Voltage: 2.7 V to 3.7 V
Qg - Gate Charge: 38 nC
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 130 W
Mounting Style: Through Hole
Package / Case: TO-247-3
Brand: Toshiba
Ciss - Input Capacitance: 1350 pF
Fall Time: 5 ns
Minimum Operating Temperature: - 55 C
Rise Time: 25 ns
Factory Pack Quantity: 30
Tradename: DTMOSIV
Typical Turn-Off Delay Time: 100 ns