Image TK12Q60W,S1VQ
型号:

TK12Q60W,S1VQ

厂商: Toshiba
标准:
分类: 半导体分离式半导体
描述: mosfet dtmosiv 600v 340mohm 11.5A 100w 890pf
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TK12Q60W,S1VQ的详细信息

Manufacturer: Toshiba
Product Category: MOSFET
RoHS: Yes
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 600 V
Vgs - Gate-Source Breakdown Voltage: 30 V
Id - Continuous Drain Current: 11.5 A
Rds On - Drain-Source Resistance: 265 mOhms
Configuration: Single
Vgs th - Gate-Source Threshold Voltage: 2.7 V to 3.7 V
Qg - Gate Charge: 25 nC
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 100 W
Mounting Style: Through Hole
Package / Case: IPAK-3
Brand: Toshiba
Ciss - Input Capacitance: 890 pF
Fall Time: 5.5 ns
Minimum Operating Temperature: - 55 C
Rise Time: 23 ns
Factory Pack Quantity: 75
Tradename: DTMOSIV
Typical Turn-Off Delay Time: 85 ns