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TK12Q60W,S1VQ的详细信息
Manufacturer: | Toshiba |
---|---|
Product Category: | MOSFET |
RoHS: | Yes |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 600 V |
Vgs - Gate-Source Breakdown Voltage: | 30 V |
Id - Continuous Drain Current: | 11.5 A |
Rds On - Drain-Source Resistance: | 265 mOhms |
Configuration: | Single |
Vgs th - Gate-Source Threshold Voltage: | 2.7 V to 3.7 V |
Qg - Gate Charge: | 25 nC |
Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 100 W |
Mounting Style: | Through Hole |
Package / Case: | IPAK-3 |
Brand: | Toshiba |
Ciss - Input Capacitance: | 890 pF |
Fall Time: | 5.5 ns |
Minimum Operating Temperature: | - 55 C |
Rise Time: | 23 ns |
Factory Pack Quantity: | 75 |
Tradename: | DTMOSIV |
Typical Turn-Off Delay Time: | 85 ns |
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