Image TK10Q60W,S1VQ
型号:

TK10Q60W,S1VQ

厂商: Toshiba
标准:
分类: 半导体分离式半导体
描述: mosfet N-Ch dtmosiv 600 V 80w 700pf 20nc 9.7A
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TK10Q60W,S1VQ的详细信息

Manufacturer: Toshiba
Product Category: MOSFET
RoHS: Yes
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 600 V
Vgs - Gate-Source Breakdown Voltage: 30 V
Id - Continuous Drain Current: 9.7 A
Rds On - Drain-Source Resistance: 327 mOhms
Configuration: Single
Vgs th - Gate-Source Threshold Voltage: 3.7 V
Qg - Gate Charge: 20 nC
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 80 W
Mounting Style: Through Hole
Package / Case: IPAK-3
Brand: Toshiba
Channel Mode: Enhancement
Ciss - Input Capacitance: 700 pF
Fall Time: 5.5 ns
Minimum Operating Temperature: - 55 C
Rise Time: 22 ns
Factory Pack Quantity: 75
Typical Turn-Off Delay Time: 75 ns