T1G3000532-SM的详细信息
Manufacturer: | TriQuint |
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Product Category: | Transistors RF JFET |
RoHS: | Yes |
Type: | GaN SiC HEMT |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 32 V |
Vgs - Gate-Source Breakdown Voltage: | -2.7 V |
Id - Continuous Drain Current: | 0.6 A |
Frequency: | 0.03 GHz to 3.5 GHz |
Gain: | 15.7 dB |
Pd - Power Dissipation: | 7.5 W |
Mounting Style: | SMD/SMT |
Package / Case: | QFN-32 |
Packaging: | Tray |
Brand: | TriQuint Semiconductor |
Configuration: | Single |
Development Kit: | T1G3000532-SM-EVB |
Product: | RF Transistors |
Rds On - Drain-Source Resistance: | 50 Ohms |
Part # Aliases: | 1112209 |
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