![]() |
STU5N60M2的详细信息
Manufacturer: | STMicroelectronics |
---|---|
Product Category: | MOSFET |
RoHS: | Yes |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 650 V |
Vgs - Gate-Source Breakdown Voltage: | 25 V |
Id - Continuous Drain Current: | 3.7 A |
Rds On - Drain-Source Resistance: | 1.4 Ohms |
Configuration: | Single |
Vgs th - Gate-Source Threshold Voltage: | 3 V |
Qg - Gate Charge: | 4.5 nC |
Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 45 W |
Mounting Style: | Through Hole |
Package / Case: | IPAK-3 |
Packaging: | Tube |
Brand: | STMicroelectronics |
Minimum Operating Temperature: | - 55 C |
Factory Pack Quantity: | 75 |
扫码手机查看更方便
同类器件