 |
STMicroelectronics 
STD2HNK60Z-1的详细信息
| Manufacturer： | STMicroelectronics |
|---|---|
| Product Category： | MOSFET |
| RoHS： | Yes |
| Brand： | STMicroelectronics |
| Transistor Polarity： | N-Channel |
| Vds - Drain-Source Breakdown Voltage： | 600 V |
| Vgs - Gate-Source Breakdown Voltage： | 30 V |
| Id - Continuous Drain Current： | 2 A |
| Rds On - Drain-Source Resistance： | 4.8 Ohms |
| Configuration： | Single |
| Vgs th - Gate-Source Threshold Voltage： | 3.75 V |
| Qg - Gate Charge： | 11 nC |
| Maximum Operating Temperature： | + 150 C |
| Pd - Power Dissipation： | 45 W |
| Mounting Style： | Through Hole |
| Package / Case： | IPAK-3 |
| Packaging： | Tube |
| Channel Mode： | Enhancement |
| Fall Time： | 50 ns |
| Forward Transconductance - Min： | 1.5 S |
| Minimum Operating Temperature： | - 55 C |
| Rise Time： | 30 ns |
| Series： | STD2HNK60Z |
| Factory Pack Quantity： | 75 |
| Typical Turn-Off Delay Time： | 13 ns |
STD2HNK60Z-1相关文档
扫码手机查看更方便
同类器件
