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SI4666DY-T1-GE3的详细信息
Manufacturer: | Vishay |
---|---|
Product Category: | MOSFET |
RoHS: | Yes |
Brand: | Vishay / Siliconix |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 25 V |
Vgs - Gate-Source Breakdown Voltage: | 12 V |
Id - Continuous Drain Current: | 16.5 A |
Rds On - Drain-Source Resistance: | 10 mOhms |
Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 5 W |
Mounting Style: | SMD/SMT |
Package / Case: | SO-8 |
Packaging: | Reel |
Minimum Operating Temperature: | - 55 C |
Factory Pack Quantity: | 2500 |
Part # Aliases: | SI4666DY-GE3 |
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