SI1016X-T1-GE3的详细信息
Manufacturer: | Vishay |
---|---|
Product Category: | MOSFET |
RoHS: | Yes |
Brand: | Vishay / Siliconix |
Transistor Polarity: | N and P-Channel |
Vds - Drain-Source Breakdown Voltage: | 20 V |
Vgs - Gate-Source Breakdown Voltage: | 6 V |
Id - Continuous Drain Current: | 600 mA |
Rds On - Drain-Source Resistance: | 410 mOhms, 800 mOhms |
Configuration: | Complementary |
Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 250 mW |
Mounting Style: | SMD/SMT |
Package / Case: | SC-89-6 |
Packaging: | Reel |
Channel Mode: | Enhancement |
Minimum Operating Temperature: | - 55 C |
Factory Pack Quantity: | 3000 |
Tradename: | TrenchFET |
Part # Aliases: | SI1016X-GE3 |
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