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型号: | SGL50N60RUFDTU |
厂商: |
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标准: | ![]() ![]() |
分类: | 半导体 , 分离式半导体 |
描述: | igbt transistors N-CH 600v 50a |
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Datasheet下载地址
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SGL50N60RUFDTU的详细信息
Manufacturer: | Fairchild Semiconductor |
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Product Category: | IGBT Transistors |
RoHS: | Yes |
Configuration: | Single |
Collector- Emitter Voltage VCEO Max: | 600 V |
Collector-Emitter Saturation Voltage: | 2.2 V |
Maximum Gate Emitter Voltage: | +/- 20 V |
Continuous Collector Current at 25 C: | 80 A |
Gate-Emitter Leakage Current: | 250 W |
Power Dissipation: | 250 W |
Maximum Operating Temperature: | + 150 C |
Package / Case: | TO-264-3 |
Packaging: | Tube |
Brand: | Fairchild Semiconductor |
Continuous Collector Current Ic Max: | 80 A |
Minimum Operating Temperature: | - 55 C |
Mounting Style: | Through Hole |
Series: | SGL50N60 |
Factory Pack Quantity: | 25 |
Part # Aliases: | SGL50N60RUFDTU_NL |
Unit Weight: | 6.756 g |
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