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PSMN4R2-60PLQ的详细信息
Manufacturer: | NXP |
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Product Category: | MOSFET |
RoHS: | Yes |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 60 V |
Id - Continuous Drain Current: | 130 A |
Rds On - Drain-Source Resistance: | 8.6 mOhms |
Vgs th - Gate-Source Threshold Voltage: | 2.45 V |
Qg - Gate Charge: | 151 nC |
Pd - Power Dissipation: | 263 W |
Mounting Style: | Through Hole |
Package / Case: | TO-220-3 |
Packaging: | Tube |
Brand: | NXP Semiconductors |
Fall Time: | 72 ns |
Rise Time: | 97 ns |
Factory Pack Quantity: | 1000 |
Typical Turn-Off Delay Time: | 84 ns |
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