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型号: | PMBT3906VS,115 |
厂商: |
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标准: | ![]() ![]() |
分类: | 半导体 , 分离式半导体 |
描述: | transistors bipolar - bjt general purpose transistor |
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Datasheet下载地址
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PMBT3906VS,115的详细信息
Manufacturer: | NXP |
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Product Category: | Transistors Bipolar - BJT |
RoHS: | Yes |
Brand: | NXP Semiconductors |
Configuration: | Dual |
Transistor Polarity: | PNP |
Collector- Base Voltage VCBO: | 40 V |
Collector- Emitter Voltage VCEO Max: | - 40 V |
Emitter- Base Voltage VEBO: | - 6 V |
Maximum DC Collector Current: | - 200 mA |
Gain Bandwidth Product fT: | 250 MHz |
Maximum Operating Temperature: | + 150 C |
Mounting Style: | SMD/SMT |
Package / Case: | SOT-666 |
Continuous Collector Current: | - 200 mA |
DC Collector/Base Gain hfe Min: | 180 |
DC Current Gain hFE Max: | 60 at 0.1 mA at 1 V |
Maximum Power Dissipation: | 240 mW |
Minimum Operating Temperature: | - 55 C |
Packaging: | Reel |
Factory Pack Quantity: | 4000 |
PMBT3906VS,115相关文档
- Other type: Letter Symbols - Transistors; General (v.1.0)
- Leaflet: Downsize the footprint, boost the performance; NXP ultra-small diodes and transistors for portable applications (v.1.0)
- SPICE model: PMBT3906VS SPICE model (v.1.3)
- PCN: Customer Information Notification
- PCN: Customer Information Notification
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