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PBSS9110D,115的详细信息
Manufacturer: | NXP |
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Product Category: | Transistors Bipolar - BJT |
RoHS: | Yes |
Brand: | NXP Semiconductors |
Configuration: | Single |
Transistor Polarity: | PNP |
Collector- Base Voltage VCBO: | 120 V |
Collector- Emitter Voltage VCEO Max: | 100 V |
Emitter- Base Voltage VEBO: | 5 V |
Maximum DC Collector Current: | 1 A |
Gain Bandwidth Product fT: | 100 MHz |
Maximum Operating Temperature: | + 150 C |
Mounting Style: | SMD/SMT |
Package / Case: | TSOP |
DC Collector/Base Gain hfe Min: | 150 at 1 mA at 5 V, 150 at 250 mA at 5 V, 150 at 0.5 A at 5 V, 125 at 1 A at 5 V |
DC Current Gain hFE Max: | 150 at 1 mA at 5 V |
Maximum Power Dissipation: | 700 mW |
Minimum Operating Temperature: | - 65 C |
Packaging: | Reel |
Factory Pack Quantity: | 3000 |
Part # Aliases: | PBSS9110D T/R |
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