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NUD3160LT1G的详细信息
Manufacturer: | ON Semiconductor |
---|---|
Product Category: | MOSFET |
RoHS: | Yes |
Brand: | ON Semiconductor |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 60 V |
Vgs - Gate-Source Breakdown Voltage: | 12 V |
Id - Continuous Drain Current: | 150 mA |
Rds On - Drain-Source Resistance: | 1.8 Ohms |
Configuration: | Single |
Maximum Operating Temperature: | + 125 C |
Pd - Power Dissipation: | 225 mW |
Mounting Style: | SMD/SMT |
Package / Case: | SOT-23-3 |
Packaging: | Reel |
Channel Mode: | Enhancement |
Fall Time: | 618 ns, 600 ns |
Minimum Operating Temperature: | - 40 C |
Rise Time: | 618 ns, 600 ns |
Series: | NUD3160 |
Factory Pack Quantity: | 3000 |
NUD3160LT1G相关文档
- PCN: On Semiconductor - PCN 5-17-10
- Package Drawing: SC-74 (SC-59ML) 6 LEAD
- Package Drawing: SOT-23 (TO-236) 3 LEAD
- Simulation Model: SPICE3 Model
- Simulation Model: PSPICE Model
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