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ON Semiconductor 
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NUD3112DMT1G的详细信息
| Manufacturer： | ON Semiconductor |
|---|---|
| Product Category： | MOSFET |
| RoHS： | Yes |
| Brand： | ON Semiconductor |
| Transistor Polarity： | N-Channel |
| Vds - Drain-Source Breakdown Voltage： | 14 V |
| Vgs - Gate-Source Breakdown Voltage： | 6 V |
| Id - Continuous Drain Current： | 500 mA |
| Rds On - Drain-Source Resistance： | 900 mOhms |
| Configuration： | Dual |
| Maximum Operating Temperature： | + 85 C |
| Pd - Power Dissipation： | 380 mW |
| Mounting Style： | SMD/SMT |
| Package / Case： | SC-74-6 |
| Packaging： | Reel |
| Channel Mode： | Enhancement |
| Fall Time： | 61 ns |
| Minimum Operating Temperature： | - 40 C |
| Rise Time： | 61 ns |
| Series： | NUD3112 |
| Factory Pack Quantity： | 3000 |
NUD3112DMT1G相关文档
- PCN: On Semiconductor - PCN 5-17-10
- Simulation Model: SPICE3 Model
- Simulation Model: PSpice Model
- Application Note: Integrated Relay/Inductive Load Drivers for Industrial and Automotive Applications
- Simulation Model: SPICE3 Model
- Package Drawing: SOT-23 (TO-236) 3 LEAD
- Simulation Model: PSpice Model
- Package Drawing: SC-74 (SC-59ML) 6 LEAD
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