ON Semiconductor 
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NTD20N06T4G的详细信息
| Manufacturer： | ON Semiconductor |
|---|---|
| Product Category： | MOSFET |
| RoHS： | Yes |
| Brand： | ON Semiconductor |
| Transistor Polarity： | N-Channel |
| Vds - Drain-Source Breakdown Voltage： | 60 V |
| Vgs - Gate-Source Breakdown Voltage： | 20 V |
| Id - Continuous Drain Current： | 20 A |
| Rds On - Drain-Source Resistance： | 37.5 mOhms |
| Configuration： | Single |
| Maximum Operating Temperature： | + 175 C |
| Pd - Power Dissipation： | 60 W |
| Mounting Style： | SMD/SMT |
| Package / Case： | DPAK-2 |
| Packaging： | Reel |
| Channel Mode： | Enhancement |
| Fall Time： | 37.1 ns |
| Forward Transconductance - Min： | 13.2 S |
| Minimum Operating Temperature： | - 55 C |
| Rise Time： | 60.5 ns |
| Series： | NTD20N06 |
| Factory Pack Quantity： | 2500 |
| Typical Turn-Off Delay Time： | 27.1 ns |
NTD20N06T4G相关文档
- Simulation Model: Saber Model
- Simulation Model: SPICE3 Model
- Simulation Model: SPICE2 Model
- Package Drawing: DPAK 3 LEAD Single Gauge Surface Mount
- Simulation Model: PSpice Model
- PCN: Change Unit Probe to Sample Probe
- PCN: Final Product / Process Change Notification
- PCN: Final Product / Process Change Notification
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