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ON Semiconductor 
NTB6412ANT4G的详细信息
| Manufacturer： | ON Semiconductor |
|---|---|
| Product Category： | MOSFET |
| RoHS： | Yes |
| Transistor Polarity： | N-Channel |
| Vds - Drain-Source Breakdown Voltage： | 100 V |
| Vgs - Gate-Source Breakdown Voltage： | 20 V |
| Id - Continuous Drain Current： | 41 A |
| Rds On - Drain-Source Resistance： | 18.2 mOhms |
| Qg - Gate Charge： | 100 nC |
| Maximum Operating Temperature： | + 175 C |
| Pd - Power Dissipation： | 167 W |
| Mounting Style： | SMD/SMT |
| Package / Case： | D2PAK-2 |
| Packaging： | Reel |
| Brand： | ON Semiconductor |
| Fall Time： | 126 ns |
| Forward Transconductance - Min： | 31 S |
| Minimum Operating Temperature： | - 55 C |
| Rise Time： | 140 ns |
| Series： | NTB6412AN |
| Factory Pack Quantity： | 800 |
| Typical Turn-Off Delay Time： | 70 ns |
NTB6412ANT4G相关文档
- Simulation Model: PSpice Model
- Package Drawing: D2PAK 3 LEAD
- Simulation Model: Saber Model
- Simulation Model: Spice2 Model
- Simulation Model: Spice3 Model
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