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NJW21193G的详细信息
Manufacturer: | ON Semiconductor |
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Product Category: | Transistors Bipolar - BJT |
RoHS: | Yes |
Brand: | ON Semiconductor |
Configuration: | Single |
Transistor Polarity: | PNP |
Collector- Base Voltage VCBO: | 400 V |
Collector- Emitter Voltage VCEO Max: | 250 V |
Emitter- Base Voltage VEBO: | 5 V |
Maximum DC Collector Current: | 16 A |
Gain Bandwidth Product fT: | 4 MHz |
Maximum Operating Temperature: | + 150 C |
Mounting Style: | Through Hole |
Package / Case: | TO-3P |
DC Collector/Base Gain hfe Min: | 20 |
DC Current Gain hFE Max: | 20 at 8 A at 5 V |
Maximum Power Dissipation: | 200 mW |
Minimum Operating Temperature: | - 65 C |
Packaging: | Tube |
Series: | NJW21194 |
Factory Pack Quantity: | 30 |
NJW21193G相关文档
- Package Drawing: TO-3P-3LD
- Simulation Model: Saber Model
- Simulation Model: Spice2 Model
- Simulation Model: Spice3 Model
- Simulation Model: PSpice Model
- Simulation Model: Spice2 Model
- Simulation Model: PSpice Model
- Simulation Model: Saber Model
- Simulation Model: Spice3 Model
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