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NGTB20N120LWG的详细信息
Manufacturer: | ON Semiconductor |
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Product Category: | IGBT Transistors |
RoHS: | Yes |
Collector- Emitter Voltage VCEO Max: | 1200 V |
Collector-Emitter Saturation Voltage: | 2.2 V |
Maximum Gate Emitter Voltage: | 20 V |
Continuous Collector Current at 25 C: | 40 A |
Gate-Emitter Leakage Current: | 100 nA |
Power Dissipation: | 77 W |
Package / Case: | TO-247 |
Packaging: | Tube |
Brand: | ON Semiconductor |
Mounting Style: | Through Hole |
Series: | NGTB20N120L |
Factory Pack Quantity: | 30 |
NGTB20N120LWG相关文档
- Package Drawing: TO-247
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