ON Semiconductor 
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MTP2P50EG的详细信息
| Manufacturer： | ON Semiconductor |
|---|---|
| Product Category： | MOSFET |
| RoHS： | Yes |
| Brand： | ON Semiconductor |
| Transistor Polarity： | P-Channel |
| Vds - Drain-Source Breakdown Voltage： | - 500 V |
| Vgs - Gate-Source Breakdown Voltage： | 20 V |
| Id - Continuous Drain Current： | 2 A |
| Rds On - Drain-Source Resistance： | 6 Ohms |
| Configuration： | Single |
| Maximum Operating Temperature： | + 150 C |
| Pd - Power Dissipation： | 75 W |
| Mounting Style： | Through Hole |
| Package / Case： | TO-220-3 |
| Packaging： | Tube |
| Channel Mode： | Enhancement |
| Fall Time： | 19 ns |
| Forward Transconductance - Min： | 0.5 S |
| Minimum Operating Temperature： | - 55 C |
| Rise Time： | 14 ns |
| Series： | MTP2P50E |
| Factory Pack Quantity： | 50 |
| Typical Turn-Off Delay Time： | 21 ns |
MTP2P50EG相关文档
- Simulation Model: SP2 Model For MTB2P50E
- Simulation Model: LIB Model For MTB2P50E
- Simulation Model: SP3 Model For MTB2P50E
- Package Drawing: TO-220 3 LEAD STANDARD
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