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| 型号： | MJD112T4G |
| 厂商： |
 ON Semiconductor |
| 标准： |   |
| 分类： | 半导体 ， 分离式半导体 |
| 描述： | transistors darlington 2A 100v bipolar power npn |
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Datasheet下载地址
| 本地下载 >> 厂商下载2 >> 第三方平台下载 >> |
MJD112T4G的详细信息
| Manufacturer： | ON Semiconductor |
|---|---|
| Product Category： | Transistors Darlington |
| RoHS： | Yes |
| Brand： | ON Semiconductor |
| Configuration： | Single |
| Transistor Polarity： | NPN |
| Collector- Emitter Voltage VCEO Max： | 100 V |
| Emitter- Base Voltage VEBO： | 5 V |
| Collector- Base Voltage VCBO： | 100 V |
| Maximum DC Collector Current： | 2 A |
| Maximum Collector Cut-off Current： | 20 uA |
| Power Dissipation： | 20 W |
| Maximum Operating Temperature： | + 150 C |
| Mounting Style： | SMD/SMT |
| Package / Case： | TO-252-3 (DPAK) |
| Packaging： | Reel |
| Continuous Collector Current： | 2 A |
| DC Collector/Base Gain hfe Min： | 200, 500, 1000 |
| Minimum Operating Temperature： | - 65 C |
| Series： | MJD112 |
| Factory Pack Quantity： | 2500 |
MJD112T4G相关文档
- PCN: On Semi - IPCN - 7-23-10
- EOL: On Semi - PCN - 9-17-10
- Simulation Model: LIB Model For MJD112
- Package Drawing: DPAK 3 LEAD Single Gauge Surface Mount
- Simulation Model: SIN Model For MJD112
- Simulation Model: SP3 Model For MJD112
- Simulation Model: SP2 Model For MJD112
- Package Drawing: IPAK (DPAK−3 Insertion Mount)
- Package Drawing: DPAK 4 LEAD Single Gauge Surface Mount
- PCN: Final Product / Process Change Notification
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