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IRF7379PBF的详细信息
Manufacturer: | International Rectifier |
---|---|
Product Category: | MOSFET |
RoHS: | Yes |
Transistor Polarity: | N and P-Channel |
Vds - Drain-Source Breakdown Voltage: | 30 V |
Vgs - Gate-Source Breakdown Voltage: | 20 V |
Id - Continuous Drain Current: | 5.8 A |
Rds On - Drain-Source Resistance: | 75 mOhms |
Configuration: | Dual Dual Drain |
Qg - Gate Charge: | 16.7 nC |
Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 2.5 W |
Mounting Style: | SMD/SMT |
Package / Case: | SOIC-8 |
Packaging: | Tube |
Brand: | International Rectifier |
Channel Mode: | Enhancement |
Fall Time: | 7.7 ns, 18 ns |
Minimum Operating Temperature: | - 55 C |
Rise Time: | 21 ns, 17 ns |
Factory Pack Quantity: | 95 |
Typical Turn-Off Delay Time: | 22 ns, 25 ns |
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